MBE Growth of III-Nitride Semiconductors
by Ruediger Held
Submitted May 1995
Table of Contents
1. PERSONAL BIOGRAPHY
2. DEGREE PROGRAM
3. TRANSCRIPT
4. OTHER SCHOLARLY ACTIVITY
5. INTRODUCTION TO III-V NITRIDES
5.2 Properties
5.3 Applications
5.4 Growth Methods
6. JET THEORY AND DESIGN EQUATIONS
6.2 Jet Theory and Design Equations Summary
7. DEVELOPMENT OF A COMPACT NH_3 JET
7.2 Original N2 Jet
7.3 NH3 Jet Prototype #1
7.5 NH3 Jet Performance Compared to Leak Valve
7.6 NH3 Dissociation
7.7 Seeding Effect of Dissociated NH_3
7.8 Suggested New Jet
7.9 RF Heating
7.10 Conclusions
8. GEN II MBE SYSTEM MODIFICATIONS AND SUBSTRATES
8.2 NH_3 Compatibility
8.3 Sample Heating and Substrate Holders
8.4 Substrates and Substrate Preparation
9. GROWTH MONITORING USING RHEED
9.2 Growth of AlN and GaN on c-Plane Sapphire
9.3 Growth of GaN on a-Plane Sapphire
9.4 Growth of cubic GaN on MgO 001 and GaAs 001
9.5 GaN Reconstructions on c-plane GaN
10. GAN GROWTH INVESTIGATIONS
10.2 Determining Growth Conditions using RHEED
10.3 Substrate Temperature Calibration
10.4 GaN Decomposition
10.5 Growth Rate Model for AlN, GaN, and InN
10.6 Hysteresis of `Dips'
10.7 Growth Rates
10.8 Effect of RHEED on Growth Rate
10.9 Search for Oscillations
10.10 Growth Results: Summary
11. POST GROWTH CHARACTERIZATION OF NITRIDE FILMS
11.2 Auger Spectroscopy
11.3 Auger Depth Profiling
11.4 Rutherford Backscattering Spectroscopy (RBS)
11.5 X-Ray Analysis
11.6 Other Methods of Characterization Used and
Planned
13. APPENDIX
13.1 Jet Theory
13.3 TABLE OF TABLES
13.4 TABLE OF REFERENCES
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