Gen II MBE System Modifications and Substrates

8.1 Gen II MBE System Modifications and Substrates - Introduction

There are several issues to be considered when employing a traditional MBE system for GaN growth using NH_3. NH_3 is fairly aggressive and reacts with several materials in a conventional MBE system, mainly copper and polymers like O-rings. Also, the traditional heating arrangement typically barely reaches the necessary temperatures for GaN growth. Traditional mounting methods using In or In-Sb have to be abolished due to their high vapor pressure at typical GaN growth temperatures above 700°C.

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