GaN Growth Investigations

10.1 GaN Growth Investigations - Introduction

When NH_3 and Ga impinge on a GaN sample at substrate temperature T_sub some of the NH_3 and Ga will form GaN via the reaction:

(44)

The growth rate G depends on the surface chemistry involving several processes taking place on the surface of the sample. The amount of unreacted Ga remaining on the surface of the sample is given by the impinging Ga flux Gamma_(Ga in) minus the sum of the evaporating flux Gamma_(Ga evaporate), and the incorporating flux Gamma_(Ga incorporate), which depends on T_sub. One of the conditions for good GaN growth is that no excess Ga accumulates on the surface.

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