Post Growth Characterization of Nitride Films - Other Methods of Characterization Used and Planned

11.6 Post Growth Characterization of Nitride Films - Other Methods of Characterization Used and Planned

4 probe measurements (Hall effect and conductivity) was employed to obtain carrier concentrations and mobilities (Ref. 51). Secondary Ion Mass Spectroscopy (SIMS) was used to check for Sb contamination (Ref. 52). Atomic Force Microscopy (AFM) was employed to check surface roughness of GaN as well as a sapphire substrate (Ref. 53). Photoluminescence was used to check the GaN bandgap and compare our material to the literature (Ref. 54).

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