13.2 Table of Figures

FIGURE 1: WURTZITE AND ZINC BLENDE CRYSTAL STRUCTURE

FIGURE 2: TYPICAL LAYOUT OF A SUPERSONIC JET

FIGURE 3: TYPICAL JET EXPANSION

FIGURE 4: TYPICAL I VERSUS P_o CURVE

FIGURE 5: ORIGINAL JET

FIGURE 6: PHOTOGRAPH OF ORIGINAL JET

FIGURE 7 (Ref. 24): STICKING COEFFICIENTS OF N_2 ON FE(111)

FIGURE 8: PHOTOGRAPH (Ref. 23) OF NH_3 JET PROTOTYPE #1

FIGURE 9: JET INTENSITY AND BACKGROUND INTENSITY CHARACTERIZATION FOR THE NH_3 JET PROTOTYPE #1

FIGURE 10: NH_3 JET PROTOTYPE #2

FIGURE 11: PHOTOGRAPH (Ref. 23) OF NH3 JET PROTOTYPE #2

FIGURE 12: JET INTENSITY AND BACKGROUND INTENSITY CHARACTERIZATION FOR THE NH_3 JET PROTOTYPE #2

FIGURE 13: DECOMPOSITION FRACTION OF NH_3 IN JET NOZZLE RESERVOIR

FIGURE 14: DECOMPOSITION FRACTION OF NH_3 FOR D=200 um, rho=2.20 Å

FIGURE 15: MOLECULE ENERGY AS A FUNCTION OF NH_3 DISSOCIATION FRACTION FOR NOZZLE TEMPERATURES 300K AND 600K

FIGURE 16: SKETCH OF SUGGESTED SIMPLIFIED JET

FIGURE 17: SUBSTRATE HOLDER FOR 1'' ROUND SAMPLES

FIGURE 18: PHOTOGRAPH (Ref. 23) OF SUBSTRATE HOLDERS FOR 1'' ROUND SAMPLES

FIGURE 19: SAMPLE HOLDER FOR SQUARE SUBSTRATES OF VARIABLE SIZE

FIGURE 20: PHOTOGRAPH (Ref. 23) OF SUBSTRATE HOLDER FOR SQUARE SAMPLES OF VARIABLE SIZE

FIGURE 21: RHEED PATTERN

FIGURE 22: RHEED PATTERN OF GAN ON C-PLANE SAPPHIRE WITH ALN BUFFER LAYER

FIGURE 23: RHEED PATTERN OF GAN ON A-PLANE SAPPHIRE. NOTE THAT THE CLOSELY REGULARLY SPACED STREAKS WERE DUE TO A FAULTY CCD-CAMERA.

FIGURE 24: CUBIC GAN GROWTH ATTEMPT ON MGO 001

FIGURE 25: RHEED PATTERN OF GAN ON C-PLANE SAPPHIRE (EARLY GROWTH ATTEMPTS). NOTICE THE 2x2 RECONSTRUCTION.

FIGURE 26: 2x2 TO 1x1 TRANSITION UNDER NH_3 FLUX

FIGURE 27: TRANSITION TEMPERATURE VERSUS NOZZLE TEMPERATURE

FIGURE 28: OPTIMIZING GA FLUX USING RHEED INTENSITY (SKETCH)

FIGURE 29: OPTIMIZING GA FLUX USING RHEED INTENSITY

FIGURE 30: EXAMPLE: SUBSTRATE TEMPERATURE CALIBRATION FROM EQUATION (61)

FIGURE 31: TYPICAL SUBSTRATE TEMPERATURE CALIBRATION

FIGURE 32: GA AND AL FLUX CALIBRATION (CURRENTLY)

FIGURE 33: BALANCE POINT SUBSTRATE TEMPERATURES FOR GA, AL, AND IN, AS A FUNCTION OF FLUX

FIGURE 34: VAPOR PRESSURE OF AL, GA, AND IN

FIGURE 35: DECOMPOSITION RATE OF GAN BASED ON EQUATION (64)

FIGURE 36: DECOMPOSITION RATE OF 0001 GAN BASED ON EQUATION (64)

FIGURE 37: EXPONENTIAL CURVE FIT TO EQUATION (78) USING EQUATION (80)

FIGURE 38: TYPICAL HYSTERESIS OF `DIPS' FOR GAN

FIGURE 39: `DIP' HYSTERESIS AS FUNCTION OF GA FLUX

FIGURE 40: GROWTH RATE RESULTS USING RUTHERFORD BACKSCATTERING (RBS)

FIGURE 41: AUGER SURFACE SCAN OF GAN GROWN ON A-PLANE SAPPHIRE.

FIGURE 42: AUGER DEPTH PROFILE OF A GAN/ALN SUPERSTRUCTURE

FIGURE 43: RBS CHANNELING VERSUS NONCHANNELING.

FIGURE 44: TYPICAL DEPTH PROFILE USING RBS.

FIGURE 45: X-RAY SCAN OF WURTZITE GAN (CU K_alpha)

FIGURE 46: CONTINUUM JET EXPANSION

FIGURE 47: CENTERLINE MACH NUMBER

FIGURE 48: OFF-AXIS CONSTANT MACH NUMBER CONTOURS Y/D VERSUS X/D FOR g=7/5

FIGURE 49: QUITTING SURFACE


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