Introduction to III-V Nitrides - Growth Methods

5.4.2 Introduction to III-V Nitrides - Growth Methods - CVD

Chemical Vapor Deposition (CVD) is one of the most popular method for III-Nitride growth, usually involving NH3 reacting with some group III containing specie (Ref. 1), like GaCl, GaCl_2, GaCl_3, Ga(C_2H_5)_2Cl, GaCl_2NH_3, AlCl_3, AlBr_3, or InCl_3. Metallorganic Chemical Vapor Deposition (MOCVD) using plasma excited N_2 or NH_3 together with trimethylgallium (TMG), trimethylaluminum (TMA), and trimethylindium (TMI) is another popular method (Ref. 1). Note that plasma excitation has not proven necessary in CVD or MOCVD growth when using NH3 and substrate temperatures around 1000°C, which is equally true for RMBE.

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