11.1 Post Growth Characterization of Nitride Films - Introduction
Post growth characterization of the GaN films grown included Auger Spectroscopy,
Auger Depth Profiling, X-Ray Analysis, Photolumenescense (PL), Rutherford
Backscattering Spectrometry (RBS), and Secondary Ion Mass Spectroscopy
(SIMS). All methods used resulted in valuable information about growth
rates and crystal quality, as well as contaminations. This chapter will
cover Auger and RBS in more detail, since Auger is available in our MBE
system and RBS is planned to be used more intensively in the future for
post growth characterization.
Table of Contents