Papers

"A Rate Equation Model for the Growth of GaN on GaN(0001(bar)) by Molecular Beam Epitaxy"(Abstract), R. Held, B.E. Ishaug, A. Parkhomovsky, A.M. Dabiran, P.I. Cohen, Journal of Applied Physics, 87, 3, 2000, p. 1219-1226

"Structure and Composition of GaN(0001) A and B Surfaces"(Abstract), R. Held, G. Nowak, B.E. Ishaug, S.M. Seutter, A. Parkhomovsky, A.M. Dabiran, P.I. Cohen, I. Grzegory, and S. Porowski, Journal of Applied Physics, 85, 11, 1999, p. 7697-7704

"N-Limited versus Ga-Limited Growth of GaN (0001(bar)) by MBE using NH₃"(Abstract), R. Held, D.E. Crawford, A.M. Johnston, A.M. Dabiran, and P.I. Cohen, Surface Review and Letters, 5, 3&4, 1998

"In Situ Control of GaN Growth by Molecular Beam Epitaxy", R. Held, D.E. Crawford, A.M. Johnston, A.M. Dabiran, P.I. Cohen, Journal of Electronic Materials, 26, 3, 1997, p. 272-280

"Growth Rate Reduction of GaN Due to Ga Surface Accumulation", D. Crawford, R. Held, A.M. Johnston, A.M. Dabiran, P.I. Cohen, MRS Internet Journal of Nitride Semiconductor Research, 1, 1996, Article 12

"Construction of an InexpensiveTorque Magnetometer for Magnetic Thin Film Research", R. Held, K. Riggs, Stetson University, Journal of Undergraduate Research in Physics, 11, 2, 1993, p. 37-41, Marsh White Award for Best Paper