Invited talk at the Spring 1999 meeting to be given by my research advisor Prof. Philip I. Cohen on GaN growth by MBE
Invited Talk: Growth of GaN(0001)A and B by Molecular Beam Epitaxy, P.I. Cohen, R. Held, G. Nowak, B.E. Ishaug, A.M. Dabiran, I. Grzegory, and S. Porowski, PCSI-26, San Diego, CA, January 17-21, 1999
Electrical and Luminescent Properties of GaN (0001) and (0001} Grown on Sapphire by Molecular Beam Epitaxy, B. Ishaug, A. Parkhomovsky, R. Held, A.M. Dabiran, and P.I. Cohen, 1999 Spring Meeting in San Francisco, CA, April 5-9, 1999
Nitride MBE on Bulk Substrates, Ruediger Held, Sean M. Seutter, Brian E. Ishaug, Alexander, Parkhomovsky, Amir M. Dabiran, Philip I. Cohen, Grzegorz Nowak, Izabella Grzegory, Sylwester Porowski, Fifth Wide Bandgap Nitride Semiconductor Workshop, St. Louis, August 4-7, 1998
Surface Diffusion on GaN, Ruediger Held, Sean M. Seutter, Brian E. Ishaug, Alexander, Parkhomovsky, Amir M. Dabiran, Philip I. Cohen, Grzegorz Nowak, Izabella Grzegory, Sylwester Porowski, The Third European GaN Workshop, EGW-3, Warsaw, Poland, June 22nd - 24th, 1998
Jet Assisted Incorporation of Nitrogen, A.M.Johnston, D.E. Crawford, R. Held, A.M. Dabiran, and P.I. Cohen, 2nd Workshop on Selected Energy Epitaxy (SEE-2), Raleigh, NC, January 16-17, 1997, 01/16/97, 11:30 A.M.
NH_3 limited versus Ga limited Growth of GaN by MBE, R. Held, D.E. Crawford, A.M. Johnston, A.M. Dabiran, and P.I. Cohen, 1996 Fall Meeting in Boston, MA, December 2-6, 1996, Symposium N: III-V Nitrides, N4.3, 12/03/96, 9:45 A.M.
Optical Characterization of AlN Buffer Layers in GaN on Sapphire Heteroepitaxy, Christian Wetzel, E.E. Haller, R. Jeanloz, J Ager III, R. Held, I. Akasaki, H. Amano, Technical Program of the 38th Electronic Materials Conference, June 26-28, Session S: Nondestructive Testing, S6, 3:50PM
Surface Chemistry and Growth Kinetics of GaN on (0001) Sapphire, Devin Crawford, R. Held, A. M. Johnston, A. M. Dabiran, and P. I. Cohen, The First European GaN Workshop, EGW-1, June 2nd - 4th, 1996, Rigi, Switzerland.
Kinetics of the Growth of GaN by Molecular Beam Epitaxy, D.E. Crawford, R. Held, A.M. Johnston, A.M. Dabiran and P.I. Cohen, Materials Research Society - Spring Meeting1996 San Francisco, CA ,April 8-12, 1996, Symposium E: III-Nitride, SiC, and Diamond Materials for Electronic Devices, E12.5, 4:15 P.M.
Growth of GaN Using Ammonia: A Supersonic Jet vs a Conventional Leak, A.M. Johnston, D.E. Crawford, R. Held, A.M. Dabiran, and P.I. Cohen, Selected Energy Epitaxy Workshop (SEE-1), Pasadena, CA, January 29-30, 1996
Free Expansion Jet Sources and the MBE Growth of GaN, A.M. Johnston, D.E. Crawford, R. Held, A.M. Dabiran, and P.I. Cohen, 42nd AVS National Symposium, October 16-20, 1995, Electronic Materials & Processing Session EM-MoM
MBE Growth of GaN on Sapphire Using A Supersonic NH_3 Jet, P.I. Cohen, D.E. Crawford, A.M. Johnston, R. Held, L. Wang, and M.I. Nathan, Wide Bandgap Nitrides Workshop, St. Louis, October 17-18, 1994
Construction of an Inexpensive Torque Magnetometer for Magnetic Thin Film Research, Ruediger Held, Kevin Riggs, Stetson University, SPS section of the 1992 SESAPS multi-zone meeting in Oak Ridge, Tennessee (Marsh White Best Paper Award)
Uniaxial Anisotropy in MBE Grown Fe(100)/InGaAs Thin Films Probed with the Magneto-Optical Kerr Effect, Kevin Riggs, Steven Heulett, Ruediger Held, Stetson University, on March 20th 1992 in Durham, North Carolina
Growth and Characterization of Magneto-Optical Rare Earth-Transition Metal Thin Films, Ruediger Held, Kevin Riggs, Stetson University, SPS section of the 1992 national AAPT meeting in Orlando, Florida
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