Posters

Growth of GaN on Bulk GaN by Molecular Beam Epitaxy, Ruediger Held^*, Sean M. Seutter, Brian E. Ishaug, Alexander Parkhomovsky, Amir M. Dabiran, and Philip I. Cohen^*, UNIVERSITY OF MINNESOTA, Department of Electrical Engineering, ^*also Department of Materials Science, Grzegorz Nowak, Izabella Grzegory, and Sylwester Porowski, POLISH ACADEMY OF SCIENCES, High Pressure Research Center, 1997 Fall Meeting in Boston, MA, December 1-5, 1997, Symposium D: Nitride Semiconductor Materials, Late News, 12/01/97, Night Poster Session, Best Poster Award Nominee, also presented at PCSI-25, Salt Lake City, Jan. '98

Ammonia- vs. Ga-limited Growth of GaN(0001)A by Molecular Beam Epitaxy, R. Held, D.E. Crawford, A.M. Johnston, A.M. Dabiran, and P.I. Cohen, University of Minnesota, PCSI-24, Research Triangle Park, NC, January 12-15, 1997, Tu0920, 01/14/97, 9:20 A.M.

Characterization of GaN Needles and Platelets Grown at Atmospheric Pressure Using NH_3 in H_2, R. Held, A. Parkhomovsky, B.I. Ishaug, A.M. Dabiran, and P.I. Cohen, University of Minnesota, 1996 Fall Meeting in Boston, MA, December 2-6, 1996, Symposium N: III-V Nitrides, N3.87, 12/02/97, 8:00 P.M.

An In Situ Diffraction Method to Determine Surface Temperature of GaN, R. Held, D.E. Crawford, A.M. Johnston, A.M. Dabiran, and P.I. Cohen, University of Minnesota, presented at 42nd AVS National Symposium on Oct. 16-20 1995 in Minneapolis